Available Processes

Atmospheric Processes

75, 100, 125, 150 and 200mm diameter wafers.

• Dry oxidation
• Dry oxidation with HCl enhancement
• Dry oxidation with DCE enhancement
• Pyrogenic oxidation, internal torch
• Pyrogenic oxidation, external torch
• Pyrogenic oxidation with HCl enhancement
• Pyrogenic oxidation with DCE enhancement
• DI:H₂O bubbler oxidation
• POCl₃ phos dep liquid source doping
• BBr₃ boron dep liquid source doping 
• Solid source doping
• H₂ anneal/alloy
• Forming gas anneal/alloy/sinter
• Inert or noble gas anneal/alloy/sinter

    Photovoltaics:

• Emitter POCl₃  phos dep     
• Thermal oxidation

• LPCVD silicon nitride
• Annealing
• Applicable to 125mm and 156mm square and pseudo-square substrates.

    Most atmospheric processes are available with

    guaranteed process performance criteria. Please

    contact RCH Associates for information.

    Custom and specialized atmospheric processes are 

    reviewed upon request. 

LPCVD Processes

75, 100, 125, 50 and 200mm diameter wafers.

• Intrinsic polysilicon
• Amorphous silicon
• Phosphorous doped polysilicon
• SiPOS (oxygen doped polysilicon)
• Silicon nitride (Si₃N₄)
• Low stress silicon nitride
• Oxynitride
• HTO
• LTO
• PSG
• BPSG
• TEOS
• Doped TEOS

    Most LPCVD processes are available with

    guaranteed process performance criteria. Please

    contact RCH Associates for information.

    Custom and specialized LPCVD processes are

    are reviewed upon request.